In situ construction of double S-Scheme NiO/Fe2O3/g-C3N4 heterojunction in collaboration with Photo-Fenton catalytic degradation of oxytetracycline
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Abstract
Aiming at the problems of low response efficiency of g-C3N4 to visible light and low separation efficiency of photogenerated electron-hole, a method of loading semiconductors onto the surface of g-C3N4 is proposed, which can improve the application of g-C3N4 in the photocatalytic degradation of organic pollutants. NiO/Fe2O3/g-C3N4 composites were synthesized by immersion method, and characterized by XRD, FT-IR and PL. The research results show that the degradation rate of OTC can reach 89.1% under photo-Fenton system. After the addition of TEOA, the degradation efficiency of OTC solution decreased from 89.1% to 42.1%. It can be concluded that hole (h+), superoxide radical (·O2−) and hydroxyl radical (·OH) were the main factor affecting the degradation process of OTC. NiO/Fe2O3/g-C3N4 photocatalytic composites have good photocatalytic degradation effect on OTC solution because double-S Scheme heterojunction formed between Fe2O3, NiO and g-C3N4 semiconductor can effectively separate electrons and holes and inhibit electron hole recombination. The research conclusion provides a reference for the application of heterojunction catalysts in conjunction with photo-Fenton in wastewater treatment.
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